Product Information Specification
Substrate Material: Aluminum Nitride (AlN)
Thermal Conductivity: 200W/230W
Type: Lapped/Polished Wafer
Substrate Thickness: 0.33mm (customizable per customer requirements)
Metal Layer Thickness:
Cu: 75μm ±10 (customizable per customer requirements)
Ni: 2-5μm
Au: 1.0μm (customizable per customer requirements)
Product Information Specification
Substrate Material: Aluminum Nitride (AlN)
Thermal Conductivity: 200W/230W
Type: Lapped/Polished Wafer
Substrate Thickness: 0.33mm (customizable per customer requirements)
Metal Layer Thickness:
Cu: 75μm ±10 (customizable per customer requirements)
Ni: 2-5μm
Au: 1.0μm (customizable per customer requirements)
Edge Verticality: Side edge angle 86°~90°
Surface Roughness: <0.1μm
Electrode Lead Thickness: <6μm
Critical Edge R-Height: <5.0μm
Metal Layer Flatness:
Single-unit flatness: <1.5μm (Cu layer)
Pattern symmetry: <20μm
